The famous Korean technology company Samsung has started mass production of the industry’s first 64 GB DDR4 registered dual-inline memory modules (RDIMMs) that use three dimensional (3D) “through silicon via” (TSV) package technology. The new memory modules are designed for use with enterprise servers and cloud base solutions as well as with data center solutions.
The new memory modules consist of 36 DDR4 DRAM chips; each one of them consists of four 4-gigabit (Gb) DDR4 DRAM dies. All chips are made using Samsung’s most advanced 20 nm class process technology and 3D TSV package technology.
“Samsung is reinforcing its competitive edge in the DRAM market with its new state-of-the-art solution using its 3D TSV technology, while driving growth in the global DRAM market,” said Jeeho Baek, vice president, memory marketing, Samsung Electronics. “By introducing highly energy-efficient DDR4 modules assembled with 3D TSV, we’re taking a big step ahead of the mainstream DDR4 market, which should dramatically expand with the expected introduction of next-generation CPUs in the second half of this year.”
The new 3D TSV DDR4 memory is twice as fast as a regular 64 GB module that uses wire bonding packaging and needs about half the power thanks to the innovative production technology that includes DDR4 dies that are ground down as thin as a few dozen micrometers. They are then pierced to contain hundreds of fine holes and then connected through electrodes that are passed through the holes. This is the secret to the speed and power efficiency of the new memory.
Samsung believes that in the future it will be able to stack more than four DDR4 dies using 3D TSV technology to create modules with even higher density and higher capacity.