Scientists have created a solid-state memory technology that allows for high-density storage with a minimum incidence of computer errors.
The memories are based on tantalum oxide, a common insulator in electronics.
Applying voltage to a 250-nanometer-thick sandwich of graphene, tantalum, nanoporous tantalum oxide, and platinum creates addressable bits where the layers meet. Control voltages that shift oxygen ions and vacancies switch the bits between ones and zeroes.
